High Voltage IGBT
Advance Technical Information
High Voltage IGBT
IXGH10N300
VCES = 3000V = 10A IC90 VCE(sat) ≤ 3.5V
For Capacitor Dis...
Description
Advance Technical Information
High Voltage IGBT
IXGH10N300
VCES = 3000V = 10A IC90 VCE(sat) ≤ 3.5V
For Capacitor Discharge Applications
TO-247 AD Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 20V, TVJ = 125°C, RG = 50Ω Clamped Inductive Load TC = 25°C Maximum Ratings 3000 3000 ±20 ±30 18 10 40 ICM = 32 @ ≤ 1250 100 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 V V V V A A A A V W °C °C °C °C °C Nm/lb.in. g Applications Capacitor Discharge Pulser Circuits Features High Peak Current Capability Low Saturation Voltage Low Gate Drive Requirement Molding Epoxies Meet UL 94 V-0 Flammability Classification
G C E (TAB)
G = Gate E = Emitter
C = Collector TAB = Collector
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C
Characteristic Values Min. Typ. Max. 3000 3.0 5.0 25 500 ±100 3.5 5.2 V V μA μA nA V V
Advantages High Power Density Easy to Mount
VCE = 0.8 VCES, VGE= 0V VCE = 0V, VGE = ±20V IC IC = 10A, VGE = 15V = 30A
© 2009 IXYS CORPORATION, All Rights Reserved
DS100151(05/09)
IXGH10N300
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC(ON) Cies Coes Cres Qg(on) Qge Qgc td(on) tr td(off) tf Rt...
Similar Datasheet