BC857ALT1G

BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Emitter Voltage BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859 Collector-Base Voltage BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Symbol VCEO −65 −45 −30 VCBO −80 −50 −30 VEBO IC IC −5.0 −100 −200 V mAdc mAdc xx M G G Max 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W 556 Unit mW mW/°C °C/W xx M G 1 = Device Code xx = (Refer to page 6) = Date Code* = Pb−Free Package V Value Unit V 1 2 SOT−23 (TO−236AB) CASE 318 STYLE 6 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION °C See detailed ordering and shipping information in the package dimens...