KHB2D0N60F2

SEMICONDUCTOR TECHNICAL DATA General Description KHB2D0N60P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB2D0N60P A O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 10.9nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + H K L M N O P Q 1 2 3 MAXIMUM RATING (Tc=25 ) RATING 1. GATE 2. DRAIN 3. SOURCE TO-220AB CHARACTERISTIC SYMBOL KHB2D0N60F UNIT KHB2D0N60P KHB2D0N60F2 600 30 2.0 2.0* 1.2* 8.0* 120 5.4 5.5 54 23 0.18 150 -55 150 mJ mJ V/ns Q KHB2D0N60F A F C Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID 1.2 IDP EAS EAR dv/dt PD 0.43 Tj Tstg 8.0 V V O B E G DIM MILLIMETERS A K L M J R D N N H W W/ 1 2 3 A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + 13.0 MAX _ 0.1 3.23 + 1.47 MAX 1.47 MAX ...