MBSK110M

MBSK12M THRU MBSK110M Schottky Bridge Rectifier ■ Features ● ● ● ■ Outline Dimensions and Mark MBM Io 1.0A VRRM 20V~100V Schottky chip ● High surge forward current capability ● Low VF .157(4.00) .142(3.60) .287(7.3) .248(6.3) .209(5.3) .189(4.8) .193(4.90) .177(4.50) .053(1.53) .037(0.95) .013(0.33) .0088(0.22) ■ Applications ● General purpose 1 phase Bridge rectifier applications .106(2.70) .090(2.30) .252(6.4) .236(6.0) .033(0.84) .022(0.56) .109(2.75) .089(2.25) ■（） Limiting Values（Absolute Maximum Rating） Item Repetitive Peak Reverse Voltage Average Rectified Output Current （） Surge(Nonrepetitive)Forward Current Current Squared Time Storage Temperature Junction Temperature Dimensions in inches and (millimeters) Symbol Unit VRRM V Conditions 12M 20 14M 40 MBSK 16M 18M 60 80 110M 100 IO A 60Hz，，Ta=25℃ 60Hz sine wave, R-load, Ta=25℃ 60HZ，，Tj=25℃ 60HZ sine wave, 1 cycle, Tj=25℃ 1ms≤t<8.3ms Tj=25℃， 1ms≤t<8.3ms Tj=25℃，Rating of per diode 1.0 IFSM A 40 2 It A2S ℃ ℃ 6.6 -55 ~+150 -55 ~+150 Tstg Tj ■ （Ta=25℃ ） Electrical Characteristics（Ta=25℃ Unless otherwise specified） Item Peak Forward Voltage Peak Reverse Current Symbol Unit VFM V Test Condition IFM=0.5A, ， IFM=0.5A, Pulse measurement, Rating of per diode VRM=VRRM ,， VRM=VRRM , Pulse measurement, Rating of per diode ，- Between junction and ambient, On glassepoxi substrate Between junction and lead 0.55 Max 0.65 0.85 IRRM mA 0.5 Thermal Resistance RθJ-A ℃/W RθJ-...