MBSK12S THRU MBSK110S Schottky Bridge Rectifier
■ Features
● ●
■
MBS
Outline Dimensions and Mark
.014(0.35) .006(0.15...
MBSK12S THRU MBSK110S
Schottky Bridge Rectifier
■ Features
● ●
■
MBS
Outline Dimensions and Mark
.014(0.35) .006(0.15) .083(2.12) .043(1.10)
Io
1.0A
VRRM 20V~100V ●
Schottky chip ● High surge forward current capability ● Low VF
Mounting Pad Layout
0.094 (2.40)
.008(0.20) MAX
.157(4.00) .142(3.60)
.276(7.0) MAX
.102(2.60) .087(2.20) .193(4.90) .177(4.50) .053(1.53) .037(0.95)
0.236 (6.00)
.043(1.10) .028(0.70) .053(1.53) .037(0.95)
■ Applications
●
0.072 (1.84)
.118(3.0) MAX
.106(2.70) .090(2.30)
General purpose 1 phase Bridge rectifier applications
0.047 (1.20)
.033(0.84) .022(0.56)
Dimensions in inches and (millimeters)
■() Limiting Values(Absolute Maximum Rating)
Item
Repetitive Peak Reverse Voltage Average Rectified Output Current () Surge(Nonrepetitive)Forward Current Current Squared Time Storage Temperature Junction Temperature
Symbol Unit
VRRM V
Conditions
MBSK 12S 14S 16S 18S 110S
20 40 60 80 100
IO
A
60Hz, ,Ta=25℃ 60Hz sine wave, R-load, Ta=25℃
On alumina substrate - On glass-epoxi substrate
1.0 0.8 40
IFSM
A
60HZ,,Tj=25℃ 60HZ sine wave, 1 cycle, Tj=25℃ 1ms≤t<8.3ms Tj=25℃, 1ms≤t<8.3ms Tj=25℃,Rating of per diode
2 It
A2S ℃ ℃
6.6 -55 ~+150 -55 ~+150
Tstg Tj
■ (Ta=25℃ ) Electrical Characteristics(Ta=25℃ Unless otherwise specified)
Item
Peak Forward Voltage Peak Reverse Current
Symbol Unit
VFM IRRM V mA
Test Condition
IFM=0.5A, ,IFM=0.5A, Pulse measurement, Rating of per diode VRM=VRRM ,, VRM=VRRM , Pulse measureme...