N-Channel MOSFET. 8205A Datasheet

8205A MOSFET. Datasheet pdf. Equivalent


RZC Microelectronics 8205A
8205A
Dual N-Channel MOSFET
.
GENERAL DESCRIPTION
The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology
to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is
suitable for use as a load switch .
FEATURES
l VDS =20 V
l ID =6A
l Low on-state resistance Fast switching
RDS(on) = 45mΩ (typ.)(VGS = 4.5V, ID = 2.0A)
RDS(on) = 48mΩ (typ.)(VGS = 3.85V, ID = 2.0A)
RDS(on) = 60mΩ (typ.)(VGS = 2.5V, ID = 2.0A)
l Lead free product is acquired
l Surface Mount Package
APPLICATION
l Battery protection
l Load switch
l Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
8205A
Device
8250A
Device Package
TSSOP8
Reel size
Φ180mm
Tape width
8mm
PIN DESCRIPTION
Quantity
3000 units
Datasheet
2012-2-27
Page 1 of 6


8205A Datasheet
Recommendation 8205A Datasheet
Part 8205A
Description Dual N-Channel MOSFET
Feature 8205A; 8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Tra.
Manufacture RZC Microelectronics
Datasheet
Download 8205A Datasheet




RZC Microelectronics 8205A
8205A
PIN NUM
1
2
3
4
5
6
7
8
PIN NAME
D
S1
S1
G1
G2
S2
S2
D
ABSOLUTE MAXIMUM RATINGS (TA = 25)
PIN FUNCTION
DRAIN
SOURCE1
SOURCE1
GATE2
GATE2
SOURCE2
SOURCE2
DRAIN
Symbol
VDS
ID
IDM
VGS
PD
Tstg
Parameter
Drain-source Voltage
Drain Current(continuous)at Tc=25
Drain Current (pulsed)
Gate-source Voltage
Power Dissipation (TC = 25°C)
Operating and Storage Temperature Rang
(Note1)
(Note2)
(Note1)
Value
20
6
24
±12
1.25
-55 to +150
Unit
V
A
A
V
W
Notes a. PW<10us,Duty Cycle<1%,VGS=4.5V
b. Mounted on ceramic substrate of 45 cm2x 2.2mm.
Caution: These values must not be exceeded under any conditions.
Remark: The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Thermal Data
Symbol Parameter
Rthj-amb Thermal Resistance Junction- ambient
Electrical Characteristics (TC = 25)
Max.
83
Unit
/W
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
Parameter
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate threshold voltage
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Test Conditions
ID=250uA, VGS=0V
VDS=20V,VGS=0V
VGS=±10V,VDS=0V
VDS=VGS,ID= 250uA
VGS=4.5V,ID=2A
VGS=3.85V,ID=2A
VGS=2.5V,ID=2A
Min.
20
0.5
VDS=15V,VGS=0V,f=1MHz
VDD=10V,ID=3A,
VGS=4.5V,RG=4.7
(Note2,3)
Typ.
45
48
60
370
89
9.7
200
236
Max. Unit
V
1 µA
±1 µA
1.15 V
50 mΩ
52 mΩ
70 mΩ
pF
pF
pF
ns
ns
Datasheet
2012-2-27
Page 2 of 6



RZC Microelectronics 8205A
td(off)
tf
Qg
Qgs
Qgd
VSD(*)
Trr
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
VDD=16V,VGS=4.5V,
ID=6A
(Note2,3)
IF=6A,VGS=0V
VDD=10V,IF=6A,di/dt=100A/us
(Note2)
Notes:
1. Surface Mounted on FR4 Board, t≤10sec
2. Pulse Test : Pulse width 300µs, Duty cycle 2%
3. Essentially independent of operating temperature
(*)Pulsed: Pulse duration
8205A
36 ns
165 ns
7.5 nC
2.5 nC
1.3 nC
0.74 1.2
80
V
ns
Typical characteristics (25unless noted)
Figure 1 Output Characteristics
ID(A10)
VGS=4.5V
8 2.5V
Figure 2 Transfer Characteristics
ID(A10)
8
6 2.0V
4
1.5V
2
1.0V
0
0 2 4 6 8 VDS(1V0)
Figure 3 Threshold Voltage vs.
Temperature
V1t.h4
1.2
1.0
0.8 VDS=VGS
ID=250uA
0.6
6
4 VDS=10V
2
0
0 0.9 1.8 2.7 3.6 VGS(4V.5)
Figure 4 BVDSS vs.Temperature
BVD1S.S3
1.2
1.1
1.0
V GS =0V
ID=250uA
0.9
0.4
-75 -25 25
75 125 Tj1(75)
0.8
-75 -25 25 75 125 Tj(17)5
Datasheet
2012-2-27
Page 3 of 6







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