IRFBC30S

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 31 4.6 17 Single D FEATURES 600 2.2 Halogen-free According to IEC 61249-2-21 Definition Surface Mount (IRFBC30S, SiHFBC30S) Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) Available in Tape and Reel (IRFBC30S, SiHFBC30S) Dynamic dV/dt Rating 150 °C Operating Temperature Fast Switching Fully Avalanche Rated Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L) is a available for low-profile applications. D2PAK (TO-263) SiHFBC30STRL-GE3a IRFBC30STRLPbFa SiHFBC30STL-E3a I2PAK (TO-262) SiHFBC30L-GE3 IRFBC30LPbF SiHFBC30L-E3 I2PAK (TO-262) D2PAK (TO-263) DESCRIPTION G G D S G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK ...