AO3407

SMD Type P-Channel Enhancement MOSFET MOSFET IC AO3407 (KO3407) SOT-23 Unit: mm +0.1 2.4 -0.1 ID = -4.1 A RDS(ON) RDS(ON) 52m 87m (VGS = -10V) (VGS = -4.5V) D +0.1 1.3 -0.1 VDS (V) = -30V 1 +0.1 0.95 -0.1 +0.1 1.9 -0.1 2 0.55 0.4 Features +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 +0.05 0.1 -0.01 +0.1 0.97 -0.1 1.Base 1. Gate 2.Emitter 2. Source S +0.1 0.38 -0.1 0-0.1 G 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range t ≤10s Steady State Ta = 25℃ Ta = 70℃ Symbol VDS VGS ID IDM PD RthJA RthJL TJ Tstg Rating -30 ±20 -4.1 -3.5 -20 1.4 1 90 125 60 150 -55 to 150 ℃ ℃/W W A Unit V www.kexin.com.cn 1 SMD Type P-Channel Enhancement MOSFET MOSFET IC AO3407 (KO3407) Test Conditions ID=-250μA, VGS=0V VDS=-24V, VGS=0V VDS=-24V, VGS=0V, TJ=55℃ VDS=0V, VGS=±20V VDS=VGS ID=-250μA VGS=-10V, ID=-4.1A VGS=-10V, ID=-4.A VGS=-4.5V, ID=-3A VGS=-4.5V, VDS=-5V VDS=-5V, ID=-4A VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-4A TJ=125℃ -10 5.5 8.2 700 120 75 10 14.3 7 3.1 8.6 VGS=-10V, VDS=-15V, RL=3.6Ω,RGEN=3Ω 5 28.2 13.5 IF=-4A, dI/dt=100A/μs 27 15 -2.2 IS=-1A,VGS=0V -0.77 -1 nC A V ns nC Ω pF -1 -1.8 40.5 57 64 Min -30 -1 -5 ±100 -3 52 73 87 A S mΩ Typ Max Unit V μA nA V Electrical Characteristics Ta ...