IRFH5302DPBF

IRFH5302DPbF VDS RDS(on) max (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 30 V 2.5 mΩ 0.65 V 19 ns h 100 A Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Features Low RDSon (<2.5mΩ) Schottky Intrinsic Diode with Low Forward Voltage Low Thermal Resistance to PCB (<1.2°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification HEXFET® Power MOSFET PQFN 5X6 mm Benefits Lower Conduction Losses Lower Switching Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number Package Type IRFH5302DTRPBF IRFH5302DTR2PBF PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Qua nti ty Tape and Reel 4000 Tape and Reel 400 Note EOL Notice #259 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V h Continuous Drain Current, VGS @ 10V h Continuous Drain Current, VGS @ 10V c Pulsed Drain Current g Power Dissipation g Power Dissipation g Linear Derating Factor TJ TSTG Operating Junctio...