IRFH5306PBF

VDS RDS(on) max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 30 8.1 7.8 1.4 44 Applications Control MOSFET for buck converters V mΩ nC Ω A IRFH5306PbF HEXFET® Power MOSFET PQFN 5X6 mm Features and Benefits Fe a ture s Low charge (typical 7.8nC) Low thermal resistance to PCB (< 4.9°C/W) 100% Rg tested Low profile (< 0.9 mm) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Industrial qualification results in ⇒ Be ne fi ts Lower switching losses Increased power density Increased reliability Increased power density Multi-vendor compatibility Easier manufacturing Environmentally friendly Increased reliability Orderable part number Package Type IRFH5306TRPBF IRFH5306TR2PBF PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice #259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current gPower Dissipation gPower Dissipation gLinear Derating Factor TJ Operating Junction and TSTG Storage Temperature Range Max. 30 ±20 15 13 44 28 60 3.6 26 0.029 -55 to + 150 Units V A W W/°C °C ...