IRFH7084TRPbF

StrongIRFET™ IRFH7084PbF Application  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  DC/DC converters  DC/AC Inverters HEXFET® Power MOSFET VDSS RDS(on) typ. max 40V 0.95m 1.25m 265A 100A ID (Silicon Limited) ID (Package Limited) Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant PQFN 5X6 mm Base part number IRFH7084PbF Package Type PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH7084TRPbF RDS(on), Drain-to -Source On Resistance ( m ) 6 300 ID = 100A 5 240 ID, Drain Current (A) Limited by package 4 180 3 2 TJ = 125°C 120 1 60 TJ = 25°C 0 4 8 12 16 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com © 2013 International Rectifier September 06 , 2013 IRFH7084PbF Absolute Maximium Rating Symbol ID @ TA = 25°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current  Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperat...