IRFH7110TRPBF

IRFH7110PbF HEXFET® Power MOSFET VDS Vgs max RDS(on) max (@VGS = 10V) 100 ± 20 13.5 58 0.6 50 V V mΩ nC Ω A PQFN 5X6 mm QG (typical) RG (typical) ID (@Tc(Bottom) = 25°C) i Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Low RDSon (< 13.5mW) Low Thermal Resistance to PCB (< 1.2°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRFH7110TRPBF IRFH7110TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Benefits Lower Conduction Losses Enables better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Note Form Tape and Reel Tape and Reel Quantity 4000 400 EOL notice # 259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Max. 100 ± 20 11 8.6 58 37 50 240 3...