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IRFH8311TRPBF Dataheets PDF



Part Number IRFH8311TRPBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFH8311TRPBF DatasheetIRFH8311TRPBF Datasheet (PDF)

IRFH8311PbF VDS Vgs max 30 ± 20 2.1 3.2 30 80 V V mΩ nC A HEXFET® Power MOSFET RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ. ID (@Tc(Bottom) = 25°C) i PQFN 5X6 mm Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Low Thermal Resistance to PCB (< 1.3°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualificati.

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IRFH8311PbF VDS Vgs max 30 ± 20 2.1 3.2 30 80 V V mΩ nC A HEXFET® Power MOSFET RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ. ID (@Tc(Bottom) = 25°C) i PQFN 5X6 mm Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Low Thermal Resistance to PCB (< 1.3°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Benefits Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number IRFH8311TRPBF IRFH8311TR2PBF Standard Pack Orderable part number Note Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 IRFH8311TRPBF PQFN 5mm x 6mm Tape and Reel 400 IRFH8311TR2PBF EOL notice #259 Package Type Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation g Power Dissipation g Max. 30 ± 20 32 169 26 Units V c hi 107hi 80i 400 3.6 96 A W W/°C °C Linear Derating Factor Operating Junction and g 0.029 -55 to + 150 Storage Temperature Range Notes  through ‡ are on page 9 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 7, 2014 IRFH8311PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒV DSS/∆ TJ RDS(on) V GS(th) ∆ VGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 83 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.021 1.70 2.60 1.8 -6.6 ––– ––– ––– ––– ––– 66 30 9.7 3.9 8.6 7.8 12.5 21 0.6 21 26 21 12 4960 1065 455 Max. Units ––– ––– 2.10 3.20 2.35 ––– 1 150 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF V GS = 0V V DS = 10V ƒ = 1.0MHz ns nC Ω nC V DS = 15V V GS = 4.5V ID = 20A nA S nC V Conditions V GS = 0V, ID = 250µA V GS = 10V, I D = 20A V GS = 4.5V, ID = 16A V/°C Reference to 25°C, ID = 1.0mA mΩ V mV/°C µA V DS = 24V, V GS = 0V V DS = 24V, V GS = 0V, TJ = 125°C V GS = 20V V GS = -20V V DS = 10V, ID = 20A V GS = 10V, VDS = 15V, ID = 20A V DS = V GS, ID = 100µA e e V DS = 16V, V GS = 0V V DD = 15V, V GS = 4.5V ID = 20A RG=1.8Ω Avalanche Characteristics Parameter E AS IAR Single Pulse Avalanche Energy Avalanche Current ™ d Min. ––– ––– ––– ––– ––– Typ. ––– ––– Max. 326 20 Units mJ A Diode Characteristics Parameter IS ISM V SD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Typ. ––– ––– ––– 22 47 Max. Units 80 Conditions MOSFET symbol D i A V ns nC showing the integral reverse G S Ù 400 1.0 33 71 p-n junction diode. TJ = 25°C, IS = 20A, V GS = 0V TJ = 25°C, IF = 20A, V DD = 15V di/dt = 390 A/µs e eà Time is dominated by parasitic Inductance Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) f Junction-to-Case f Junction-to-Case Parameter Junction-to-Ambient g Junction-to-Ambient g Typ. ––– ––– ––– ––– Max. 1.3 30 35 0.99 Units °C/W 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 7, 2014 IRFH8311PbF 1000 TOP VGS 10V 7.0V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V 1000 TOP VGS 10V 7.0V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 2.8V 1 2.8V ≤60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 1 0.1 1 ≤60µs PULSE WIDTH Tj = 150°C 10 100 1000 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) Fig 2. Typical Output Characteristics 1.8 ID = 20A 1.6 1.4 1.2 1.0 0.8 0.6 VGS = 10V ID, Drain-to-Source Current (A) 100 T J = 150°C T J = 25°C 10 VDS = 15V ≤60µs PULSE WIDTH 1.0 1 2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100 120 .


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