Document
IRFH8311PbF
VDS Vgs
max
30 ± 20 2.1 3.2 30 80
V V mΩ nC A
HEXFET® Power MOSFET
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ. ID
(@Tc(Bottom) = 25°C)
i
PQFN 5X6 mm
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features Low Thermal Resistance to PCB (< 1.3°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Benefits Enable better thermal dissipation results in Increased Power Density
⇒
Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base part number IRFH8311TRPBF IRFH8311TR2PBF
Standard Pack Orderable part number Note Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 IRFH8311TRPBF PQFN 5mm x 6mm Tape and Reel 400 IRFH8311TR2PBF EOL notice #259 Package Type
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation g Power Dissipation g
Max.
30 ± 20 32 169 26
Units
V
c
hi 107hi 80i
400 3.6 96
A
W W/°C °C
Linear Derating Factor Operating Junction and
g
0.029 -55 to + 150
Storage Temperature Range
Notes through are on page 9
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 7, 2014
IRFH8311PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒV DSS/∆ TJ RDS(on) V GS(th) ∆ VGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 83 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ.
––– 0.021 1.70 2.60 1.8 -6.6 ––– ––– ––– ––– ––– 66 30 9.7 3.9 8.6 7.8 12.5 21 0.6 21 26 21 12 4960 1065 455
Max. Units
––– ––– 2.10 3.20 2.35 ––– 1 150 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF V GS = 0V V DS = 10V ƒ = 1.0MHz ns nC Ω nC V DS = 15V V GS = 4.5V ID = 20A nA S nC V
Conditions
V GS = 0V, ID = 250µA V GS = 10V, I D = 20A V GS = 4.5V, ID = 16A
V/°C Reference to 25°C, ID = 1.0mA mΩ V mV/°C µA V DS = 24V, V GS = 0V V DS = 24V, V GS = 0V, TJ = 125°C V GS = 20V V GS = -20V V DS = 10V, ID = 20A V GS = 10V, VDS = 15V, ID = 20A
V DS = V GS, ID = 100µA
e e
V DS = 16V, V GS = 0V V DD = 15V, V GS = 4.5V ID = 20A RG=1.8Ω
Avalanche Characteristics
Parameter E AS IAR Single Pulse Avalanche Energy Avalanche Current
d
Min.
––– ––– ––– ––– –––
Typ. ––– –––
Max. 326 20
Units mJ A
Diode Characteristics
Parameter
IS ISM V SD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Typ.
––– ––– ––– 22 47
Max. Units
80
Conditions
MOSFET symbol
D
i
A V ns nC
showing the integral reverse
G S
Ã
400 1.0 33 71
p-n junction diode. TJ = 25°C, IS = 20A, V GS = 0V TJ = 25°C, IF = 20A, V DD = 15V di/dt = 390 A/µs
e
eÃ
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s)
f Junction-to-Case f
Junction-to-Case
Parameter
Junction-to-Ambient
g Junction-to-Ambient g
Typ. ––– ––– ––– –––
Max.
1.3 30 35 0.99
Units
°C/W
2
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
January 7, 2014
IRFH8311PbF
1000
TOP VGS 10V 7.0V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V
1000
TOP VGS 10V 7.0V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.8V
1
2.8V
≤60µs PULSE WIDTH
Tj = 25°C 0.1 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V) 1 0.1 1
≤60µs PULSE WIDTH
Tj = 150°C 10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
Fig 2. Typical Output Characteristics
1.8 ID = 20A 1.6 1.4 1.2 1.0 0.8 0.6 VGS = 10V
ID, Drain-to-Source Current (A)
100 T J = 150°C T J = 25°C
10
VDS = 15V ≤60µs PULSE WIDTH 1.0 1 2 3 4 5 6
-60 -40 -20 0
20 40 60 80 100 120 .