IRFH8316PBF

IRFH8316PbF VDS Vgs max RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ ID (@Tc(Bottom) = 25°C) 30 ± 20 2.95 4.30 30.0 50i V V mΩ nC A HEXFET® Power MOSFET PQFN 5X6 mm Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Features Low Thermal Resistance to PCB (< 1.7°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Benefits Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH8316TRPBF IRFH8316TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current gPower Dissipation gPower Dissipation gLinear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Max. 30 ± 20 27 21 120hi 78hi 50i 490 3.6 59 0.029 -55 to + 150 Un...