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IRFH8318PBF Dataheets PDF



Part Number IRFH8318PBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFH8318PBF DatasheetIRFH8318PBF Datasheet (PDF)

IRFH8318PbF HEXFET® Power MOSFET VDS Vgs max RDS(on) max (@VGS = 10V) (@VGS = 4.5V) 30 ± 20 3.1 4.6 19 50 V V mΩ nC A Qg typ ID (@Tc(Bottom) = 25°C) i PQFN 5X6 mm Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Low Thermal Resistance to PCB (< 1.7°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Be.

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IRFH8318PbF HEXFET® Power MOSFET VDS Vgs max RDS(on) max (@VGS = 10V) (@VGS = 4.5V) 30 ± 20 3.1 4.6 19 50 V V mΩ nC A Qg typ ID (@Tc(Bottom) = 25°C) i PQFN 5X6 mm Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Low Thermal Resistance to PCB (< 1.7°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Benefits Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH8318TRPBF IRFH8318TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400 Note EOL notice # 259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Max. 30 ± 20 27 21 120 76 50 400 3.6 59 0.029 -55 to + 150 Units V g g c hi hi i A W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range g Notes  through ‡ are on page 9 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 13, 2014 IRFH8318PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 81 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.019 2.5 3.6 1.8 -6.0 ––– ––– ––– ––– ––– 41 19 5.8 2.3 4.4 6.5 6.7 18 1.7 15 33 18 12 3180 700 270 Max. Units ––– ––– 3.1 4.6 2.35 ––– 1 150 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– Conditions VGS = 0V, ID = 250μA V V/°C Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 20A mΩ VGS = 4.5V, ID = 16A V VDS = VGS, ID = 50μA mV/°C VDS = 24V, VGS = 0V μA VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V VDS = 10V, ID = 20A S nC VGS = 10V, VDS = 15V, ID = 20A e e nC VDS = 15V VGS = 4.5V ID = 20A nC Ω ns VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 20A RG=1.8Ω VGS = 0V VDS = 10V ƒ = 1.0MHz Max. 160 20 Units mJ A pF Avalanche Characteristics EAS IAR ™ d Min. ––– ––– ––– ––– Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Typ. ––– ––– ––– 16 Max. Units 50 Conditions MOSFET symbol D i A Ù 400 1.0 24 V ns showing the integral reverse G S p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V e ––– 35 53 nC di/dt = 380A/μs Time is dominated by parasitic Inductance eà Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) f Junction-to-Case f Junction-to-Case Parameter g Junction-to-Ambient g Junction-to-Ambient Typ. ––– ––– ––– ––– Max. 1.7 32 35 22 Units °C/W 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 13, 2014 IRFH8318PbF 1000 TOP VGS 10V 7.00V 5.00V 4.50V 3.50V 3.00V 2.75V 2.50V 1000 TOP VGS 10V 7.00V 5.00V 4.50V 3.50V 3.00V 2.75V 2.50V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 1 2.5V 10 2.5V ≤60μs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) ≤60μs PULSE WIDTH 1 0.1 1 Tj = 150°C 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 Fig 2. Typical Output Characteristics 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 20A 1.6 1.4 1.2 1.0 0.8 0.6 ID, Drain-to-Source Current (A) VGS = 10V 100 TJ = 150°C 10 T J = 25°C 1 VDS = 15V ≤60μs PULSE WIDTH 0.1 1 2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical T.


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