Document
IRFH8318PbF
HEXFET® Power MOSFET
VDS Vgs max RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
30 ± 20 3.1 4.6 19 50
V V mΩ nC A
Qg typ ID
(@Tc(Bottom) = 25°C)
i
PQFN 5X6 mm
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features Low Thermal Resistance to PCB (< 1.7°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Benefits Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Orderable part number IRFH8318TRPBF IRFH8318TR2PBF
Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation
Max.
30 ± 20 27 21 120 76 50 400 3.6 59 0.029 -55 to + 150
Units
V
g g
c
hi hi i
A
W W/°C °C
Linear Derating Factor Operating Junction and Storage Temperature Range
g
Notes through are on page 9
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 13, 2014
IRFH8318PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current
Min.
30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 81 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ.
––– 0.019 2.5 3.6 1.8 -6.0 ––– ––– ––– ––– ––– 41 19 5.8 2.3 4.4 6.5 6.7 18 1.7 15 33 18 12 3180 700 270
Max. Units
––– ––– 3.1 4.6 2.35 ––– 1 150 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– –––
Conditions
VGS = 0V, ID = 250μA V V/°C Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 20A mΩ VGS = 4.5V, ID = 16A V VDS = VGS, ID = 50μA mV/°C VDS = 24V, VGS = 0V μA VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V VDS = 10V, ID = 20A S nC VGS = 10V, VDS = 15V, ID = 20A
e e
nC
VDS = 15V VGS = 4.5V ID = 20A
nC Ω ns
VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 20A RG=1.8Ω VGS = 0V VDS = 10V ƒ = 1.0MHz Max. 160 20 Units mJ A
pF
Avalanche Characteristics
EAS IAR
d
Min.
––– ––– ––– –––
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Typ.
––– ––– ––– 16
Max. Units
50
Conditions
MOSFET symbol
D
i
A
Ã
400 1.0 24 V ns
showing the integral reverse
G S
p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V
e
––– 35 53 nC di/dt = 380A/μs Time is dominated by parasitic Inductance
eÃ
Thermal Resistance
RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s)
f Junction-to-Case f
Junction-to-Case
Parameter
g Junction-to-Ambient g
Junction-to-Ambient
Typ. ––– ––– ––– –––
Max.
1.7 32 35 22
Units
°C/W
2
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 13, 2014
IRFH8318PbF
1000
TOP VGS 10V 7.00V 5.00V 4.50V 3.50V 3.00V 2.75V 2.50V
1000
TOP VGS 10V 7.00V 5.00V 4.50V 3.50V 3.00V 2.75V 2.50V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
1
2.5V
10
2.5V
≤60μs PULSE WIDTH
Tj = 25°C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
≤60μs PULSE WIDTH
1 0.1 1 Tj = 150°C 10 100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
Fig 2. Typical Output Characteristics
1.8
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 20A 1.6 1.4 1.2 1.0 0.8 0.6
ID, Drain-to-Source Current (A)
VGS = 10V
100 TJ = 150°C 10 T J = 25°C 1 VDS = 15V ≤60μs PULSE WIDTH 0.1 1 2 3 4 5 6
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3. Typical T.