HEXFET Power MOSFET
IRFH8324PbF
VDS Vgs
max
30 ± 20 4.1 6.3 14 50
V V mΩ nC A
HEXFET® Power MOSFET
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V...
Description
IRFH8324PbF
VDS Vgs
max
30 ± 20 4.1 6.3 14 50
V V mΩ nC A
HEXFET® Power MOSFET
RDS(on) max
(@VGS = 10V) (@VGS = 4.5V)
Qg typ. ID
(@Tc(Bottom) = 25°C)
i
PQFN 5X6 mm
Applications
Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features Low Thermal Resistance to PCB (< 2.3°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Benefits Enable better thermal dissipation results in Increased Power Density
⇒
Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Orderable part number IRFH8324TRPBF IRFH8324TR2PBF
Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation
Max.
30 ± 20 23 18 90 57
Units
V
g Power Dissipation g
c
hi hi 50i
200 3.6 54
A
W W/°C °C
Linear Derating Factor Operating Junction and
g
0.029 -55 to + 150
...
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