IRFH9310PBF

IRFH9310PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) -30 4.6 110 2.8 -21 V 6 mm mΩ 5 mm D D D D S S S G Qg (typical) RG (typical) ID (@TA = 25°C) nC Ω A PQFN 5mm x 6mm Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Resulting Benefits Low RDSon (≤ 4.6mΩ) Industry-Standard PQFN Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Lower Conduction Losses results in Multi-Vendor Compatibility ⇒ Environmentally Friendlier Orderable part number IRFH9310TRPBF Package Type PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @ TA = 70°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V (Silicon Limited) Continuous Drain Current, VGS @ -10V (Silicon Limited) Continuous Drain Current, VGS @ -10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Max. -30 ± 20 -21 -17 -107 - 86 -40 -170 3.1 2.0 0.025 -55 to + 150 Units V A f f c W W/°C °C Notes  through † are on page 2 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 26, 2014 IRFH9310PbF Static @ TJ = 25°C (unless otherwise specified) Pa...