Power MOSFET
IRLH6224PbF
HEXFET® Power MOSFET
VDS Vgs max RDS(on) max
(@VGS = 4.5V) (@VGS = 2.5V)
20 ± 12 3.0 4.0 44 80
V V mΩ nC
P...
Description
IRLH6224PbF
HEXFET® Power MOSFET
VDS Vgs max RDS(on) max
(@VGS = 4.5V) (@VGS = 2.5V)
20 ± 12 3.0 4.0 44 80
V V mΩ nC
PQFN 5X6 mm
Qg typ ID
(@Tc(Bottom) = 25°C)
i
A
Applications
Battery Protection Switch
Features and Benefits
Features Low Thermal Resistance to PCB (< 2.4°C/W) 100% Rg tested Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Benefits Enable better thermal dissipation Increased Reliability results in Increased Power Density
⇒
Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Orderable part number IRLH6224TRPBF IRLH6224TR2PBF
Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation
Max.
20 ± 12 28 22 105 67 80 400 3.6 52 0.029 -55 to + 150
Units
V
g g
c
hi h i
A
W W/°C °C
Linear Derating Factor Operating Juncti...
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