Power MOSFET
IRLH7134PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
40 3.3 39 50
V mΩ nC A
PQFN 5X6 mm
Qg (typical) ID
(@Tc...
Description
IRLH7134PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
40 3.3 39 50
V mΩ nC A
PQFN 5X6 mm
Qg (typical) ID
(@Tc(Bottom) = 25°C)
i
Applications
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Features and Benefits
Features Low RDSon (≤4.7mW @ VGS = 4.5V ) Low Thermal Resistance to PCB (< 1.2°C/W) Low Profile (<0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Orderable part number IRLH7134TRPBF IRLH7134TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Benefits Lower Conduction Losses Enables better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Note
Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400
EOL notice # 259
Absolute Maximum Ratings
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Max. 40 ± 16 26 21 134 85 50 640 3.6 104 Units V
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