IRLHM630PBF

IRLHM630PbF HEXFET® Power MOSFET VDS VGS max RDS(on) max (@VGS = 4.5V) 30 ±12 3.5 4.5 41 40h V V mΩ mΩ nC A D 5 D 6 D 7 D 8 4 G 3 S 2 S 1 S RDS(on) max (@VGS = 2.5V) Q g (typical) ID (@Tc(Bottom) = 25°C) PQFN 3.3mm x 3.3mm Applications Battery Operated DC Motor Inverter MOSFET Secondary Side Synchronous Rectification MOSFET Features and Benefits Features Low RDSon (<3.5mΩ) Low Thermal Resistance to PCB (<3.4°C/W) Low Profile (<1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRLHM630TRPBF IRLHM630TR2PBF Package Type PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.3mm Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Note Form Tape and Reel Tape and Reel Quantity 4000 400 EOL notice # 259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Power Dissipation Pulsed Drain Current Max. 30 ±12 21 40 17 Units V g Power Dissipation g c h 40h 2.7 37 A 160 W...