DMN2015UFDE

DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V(BR)DSS RDS(ON) max 11.6mΩ @ VGS = 4.5V 20V 15mΩ @ VGS = 2.5V Package U-DFN2020-6 Type E ID max TA = +25°C 10.5A 9.4A Features 0.6mm profile – ideal for low profile applications PCB footprint of 4mm Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability 2 Low Gate Threshold Voltage Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: U-DFN2020-6 Type E Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (approximate) Drain Applications General Purpose Interfacing Switch Power Management Functions U-DFN2020-6 Type E Pin1 Gate Source Bottom View Bottom View Pin Out Equivalent Circuit Ordering Information (Note 4) Part Number DMN2015UFDE-7 DMN2015UFDE-13 Notes: Marking N4 N4 Reel size (inches) 7 13 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diod...