DMP210DUFB4

DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) 5Ω @ VGS = -4.5V 7Ω @ VGS = -2.5V 10Ω @ VGS = -1.8V 15Ω @ VGS = -1.5V ID TA = +25°C -200mA -170mA -140mA -50mA Features and Benefits          P-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage VGS(TH) Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-low package profile, 0.4mm maximum package height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability -20V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.   Mechanical Data       Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (approximate) Drain Applications   DC-DC Converters Power Management Functions UL X2-DFN1006-3 S D G Gate ESD protected Bottom View Top View Internal Schematic Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMP210DUFB4-7 DMP210DUFB4-7B Notes: Case X2-DFN1006-3...