FDMA507PZ

FDMA507PZ Single P-Channel PowerTrench® MOSFET May 2010 FDMA507PZ Single P-Channel PowerTrench® MOSFET -20 V, -7.8 A, 24 mΩ Features „ Max rDS(on) = 24 mΩ at VGS = -5 V, ID = -7.8 A „ Max rDS(on) = 25 mΩ at VGS = -4.5 V, ID = -7 A „ Max rDS(on) = 35 mΩ at VGS = -2.5 V, ID = -5.5 A „ Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -4 A „ Low Profile - 0.8 mm maximum - in the package MicroFET 2X2 mm „ HBM ESD protection level > 3.2K V typical (Note3) „ Free from halogenated compounds and antimony oxides „ RoHS Compliant General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-stade resistance. The MicroFET 2X2 package offers exceptional thermal perfomance for its physical size and is well suited to linear mode applications. MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C (Note 1a) Ratings -20 ±8 -7.8 -24 2.4 0.9 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 °C/W Package Marking and Ordering Information Device Marking 507 Device FDMA507PZ Package MicroFET 2X2 Reel Siz...