PowerTrench MOSFET. FDMA7630 Datasheet

FDMA7630 Datasheet PDF, Equivalent


Part Number

FDMA7630

Description

Single N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
PDF Download
Download FDMA7630 Datasheet


FDMA7630 Datasheet
FDMA7630
Single N-Channel PowerTrench® MOSFET
July 2012
30 V, 11 A, 13 mΩ
Features
General Description
„ Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 11 A
„ Max rDS(on) = 20 mΩ at VGS = 4.5 V, ID = 9 A
„ Low Profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
„ Free from halogenated compounds and antimony oxides
„ RoHS compliant
This device has been designed to provide maximum efficiency
and thermal performance for synchronous buck converters. The
low rDS(on) and gate charge provide excellent switching
performance.
Application
„ DC – DC Buck Converters
Pin 1
Drain
DD G
Source
Bottom Drain Contact
DD
DD
DD S
MicroFET 2X2 (Bottom View)
G
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±20
11
24
2.4
0.9
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
630
Device
FDMA7630
Package
MicroFET 2x2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMA7630 Rev.C3
1
www.fairchildsemi.com

FDMA7630 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 11 A
VGS = 4.5 V, ID = 9 A
VGS = 10 V, ID = 11 A, TJ = 125 °C
VDS = 5 V, ID = 11 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V
f = 1.0 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 11 A
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
VDD = 15 V,
ID = 11 A
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 11 A, di/dt = 100 A/μs
Min
30
1.0
Typ
15
2.0
–6
10
14
14
36
1020
315
35
1.7
8
3
19
3
16
8
3.0
2.2
0.8
21
6
Max Units
V
mV/°C
1 μA
100 nA
3.0 V
mV/°C
13
20 mΩ
18
S
1360
415
55
pF
pF
pF
Ω
15 ns
10 ns
34 ns
10 ns
22 nC
10 nC
nC
nC
2A
1.2 V
33 ns
12 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 52 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
©2012 Fairchild Semiconductor Corporation
FDMA7630 Rev.C3
2
www.fairchildsemi.com


Features Datasheet pdf FDMA7630 Single N-Channel Power Trench® MOSFET FDMA7630 Single N-Channel Powe rTrench® MOSFET 30 V, 11 A, 13 mΩ Fea tures „ Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 11 A „ Max rDS(on) = 20 mΩ at VGS = 4.5 V, ID = 9 A „ Low Profil e - 0.8 mm maximum - in the new package MicroFET 2x2 mm „ Free from halogenat ed compounds and antimony oxides „ RoH S compliant July 2012 General Descrip tion This device has been designed to p rovide maximum efficiency and thermal p erformance for synchronous buck convert ers. The low rDS(on) and gate charge pr ovide excellent switching performance. Application „ DC – DC Buck Converte rs Pin 1 D D G D Bottom Drain Cont act D D S Drain Source D G S D D Mic roFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise n oted Symbol VDSS VGSS ID PD TJ, TSTG Pa rameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuo us -Pulsed Power Dissipation Power Diss ipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C (Note 1a) Rating.
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