Document
FDMA8878 Single N-Channel Power Trench® MOSFET
May 2012
FDMA8878
Single N-Channel Power Trench® MOSFET
30 V, 9.0 A, 16 mΩ
Features
Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A High performance trench technology for extremely low rDS(on) Fast switching speed RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance.
Application
DC/DC Buck Converters Load Switch in NB Notebook Battery Power Management
Pin 1
D
D
G D
Bottom Drain Contact
D D S
Drain
Source D G S D D MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TC = 25 °C TA = 25 °C (Note 1a) (Note 3) Ratings 30 ±20 10 9.0 40 2.4 0.9 -55 to +150 W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 °C/W
Package Marking and Ordering Information
Device Marking 878 Device FDMA8878 Package MicroFET 2x2 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units
©2012 Fairchild Semiconductor Corporation FDMA8878 Rev.C
1
www.fairchildsemi.com
FDMA8878 Single N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 24 V, VGS = 0 V 30 26 1 100 V mV/°C μA nA
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
On Characteristics
VGS(th) ΔVGS(th) ΔTJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 μA ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 9.0 A VGS = 4.5 V, ID = 8.5 A VGS = 10 V, ID = 9.0 A, TJ = 125 °C VDD = 5 V, ID = 9.0 A 1.2 1.8 -5 13 16 17 41 16 19 21 S mΩ 3.0 V mV/°C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 539 172 24 1.3 720 230 35 pF pF pF Ω
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Total Gate Charge Gate to Drain “Miller” Charge VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 15 V ID = 9.0 A VDD = 15 V, ID = 9.0 A, VGS = 10 V, RGEN = 6 Ω 6 2 14 2 8.5 4.1 1.6 1.2 12 10 25 10 12 5.8 ns ns ns ns nC nC nC nC
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