PowerTrench MOSFET. FDMA8878 Datasheet

FDMA8878 Datasheet PDF, Equivalent


Part Number

FDMA8878

Description

Single N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
PDF Download
Download FDMA8878 Datasheet PDF


FDMA8878 Datasheet
FDMA8878
May 2012
Single N-Channel Power Trench® MOSFET
30 V, 9.0 A, 16 mΩ
Features
General Description
„ Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A
„ Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A
„ High performance trench technology for extremely low rDS(on)
„ Fast switching speed
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance.
Application
„ DC/DC Buck Converters
„ Load Switch in NB
„ Notebook Battery Power Management
Pin 1
Drain
DD G
Source
DD S
MicroFET 2X2 (Bottom View)
Bottom Drain Contact
DD
DD
GS
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±20
10
9.0
40
2.4
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
878
Device
FDMA8878
Package
MicroFET 2x2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMA8878 Rev.C
1
www.fairchildsemi.com

FDMA8878 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
Min Typ Max Units
30 V
26 mV/°C
1 μA
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
1.2 1.8 3.0 V
ID = 250 μA, referenced to 25 °C
-5 mV/°C
VGS = 10 V, ID = 9.0 A
VGS = 4.5 V, ID = 8.5 A
VGS = 10 V, ID = 9.0 A, TJ = 125 °C
VDD = 5 V, ID = 9.0 A
13 16
16 19 mΩ
17 21
41 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
539 720 pF
172 230 pF
24 35 pF
1.3 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 9.0 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V
ID = 9.0 A
6 12 ns
2 10 ns
14 25 ns
2 10 ns
8.5 12 nC
4.1 5.8 nC
1.6 nC
1.2 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.0 A
VGS = 0 V, IS = 9.0 A
(Note 2)
(Note 2)
0.75 1.2
0.86 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 9.0 A, di/dt = 100 A/μs
16 28 ns
4 10 nC
NOTES:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 52 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2012 Fairchild Semiconductor Corporation
FDMA8878 Rev. C
2
www.fairchildsemi.com


Features Datasheet pdf FDMA8878 Single N-Channel Power Trench® MOSFET May 2012 FDMA8878 Single N-Ch annel Power Trench® MOSFET 30 V, 9.0 A , 16 mΩ Features „ Max rDS(on) = 16 m Ω at VGS = 10 V, ID = 9.0 A „ Max rDS (on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A „ High performance trench technology for extremely low rDS(on) „ Fast swit ching speed „ RoHS Compliant General Description This N-Channel MOSFET is pr oduced using Fairchild Semiconductor‘ s advanced Power Trench® process that has been optimized for rDS(on), switchi ng performance. Application „ DC/DC B uck Converters „ Load Switch in NB „ Notebook Battery Power Management Pin 1 D D G D Bottom Drain Contact D D S Drain Source D G S D D MicroFET 2X 2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Sym bol VDS VGS ID Parameter Drain to Sourc e Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) - Continuous -Pulsed PD TJ, TSTG Power Di ssipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TC = 25 °C.
Keywords FDMA8878, datasheet, pdf, Fairchild Semiconductor, Single, N-Channel, PowerTrench, MOSFET, DMA8878, MA8878, A8878, FDMA887, FDMA88, FDMA8, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)