PowerTrench MOSFET. FDMA905P Datasheet

FDMA905P Datasheet PDF, Equivalent


Part Number

FDMA905P

Description

Single P-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
PDF Download
Download FDMA905P Datasheet PDF


FDMA905P Datasheet
FDMA905P
Single P-Channel PowerTrench® MOSFET
-12 V, -10 A, 16 mΩ
Features
General Description
June 2014
„ Max rDS(on) = 16 mΩ at VGS = -4.5 V, ID = -10 A
„ Max rDS(on) = 21 mΩ at VGS = -2.5 V, ID = -8.9 A
„ Max rDS(on) = 82 mΩ at VGS = -1.8 V, ID = -4.5 A
„ Low profile - 0.8 mm maximum - in the new package
MicroFET 2X2 mm
„ Free from halogenated compounds and antimony oxides
„ RoHS Compliant
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable
applications. It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
Pin 1
Drain
DD G
Source
Bottom Drain Contact
D1
6D
D2
5D
G3
4S
DD
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Parameter
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-12
±8
-10
-40
2.4
0.9
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
A95
Device
FDMA905P
Package
MicroFET 2X2
(Note 1a)
(Note 1b)
6.9
52
145
°C/W
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMA905P Rev.C2
1
www.fairchildsemi.com

FDMA905P Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250 μA, VGS = 0V
ID = -250 μA, referenced to 25 °C
VDS = -9.6 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
-12 V
-4.3 mV/°C
-1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250 μA
ID = -250 μA, referenced to 25 °C
VGS = -4.5 V, ID = -10 A
VGS = -2.5 V, ID = -8.9 A
VGS = -1.8 V, ID = -4.5 A
VGS = -4.5 V, ID = -10 A, TJ = 125 °C
VDD = -5 V, ID = -10 A
-0.4
-0.7 -1.0
V
2.6 mV/°C
14 16
17
21
21
82
mΩ
16 21
50 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -6 V, VGS = 0 V,
f = 1 MHz
2559
490
437
3405
735
655
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -6 V, ID = -10 A,
VGS = -4.5 V, RGEN = 6 Ω
VDD = -6 V, ID = -10 A,
VGS = -4.5 V
11 20 ns
11 20 ns
120 192
ns
59 94 ns
21 29 nC
3.5 nC
4.2 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = -2 A
VGS = 0 V, IS = -10 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -10 A, di/dt = 100 A/μs
-0.6 -1.2
-0.8 -1.2
V
21 34 ns
6.1 12 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 52 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
.
©2011 Fairchild Semiconductor Corporation
FDMA905P Rev.C2
2
www.fairchildsemi.com


Features Datasheet pdf FDMA905P Single P-Channel PowerTrench® MOSFET June 2014 FDMA905P Single P-Ch annel PowerTrench® MOSFET -12 V, -10 A , 16 mΩ Features General Description T his device is designed specifically for battery charge or load switching in ce llular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and i s well suited to linear mode applicatio ns. „ Max rDS(on) = 16 mΩ at VGS = - 4.5 V, ID = -10 A „ Max rDS(on) = 21 m Ω at VGS = -2.5 V, ID = -8.9 A „ Max rDS(on) = 82 mΩ at VGS = -1.8 V, ID = -4.5 A „ Low profile - 0.8 mm maximum - in the new package MicroFET 2X2 mm „ Free from halogenated compounds and an timony oxides „ RoHS Compliant Pin 1 D D G Bottom Drain Contact Drain S ource D D G 1 2 3 6 5 4 D D S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25°C unless othe rwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage .
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