N-Channel MOSFET
SMD Type
N-Channel MOSFET
MOSFET
2SK3018
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
1
2
+0.1 0.95-0.1...
Description
SMD Type
N-Channel MOSFET
MOSFET
2SK3018
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
1
2
+0.1 0.95-0.1 +0.1 1.9-0.1
¡ñ Fast switching speed. ¡ñ Silicon N-channel MOSFET ¡ñ Drive circuits can be simple.
Gate
0.55
¡ñ Low on-resistance.
Drain
+0.1 1.3-0.1
¡ö Features
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 1. Gate
∗ Gate
+0.1 0.38-0.1
0-0.1
2.Emitter 2. Source
Protection Diode
3. Drain 3.collector
Source
¡ö Absolute
Maximum Ratings Ta = 25¡æ
Parameter Symbol VDSS VGSS ID IDP*1 PD *2 Rth(ch-a) * Tch Tstg
2
Rating 30
¡À20
Unit V V mA mW ¡æ /W ¡æ ¡æ
Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel to ambient Channel Temperature Storage temperature *1. Pw¡Ü 10ìs, duty cycle¡Ü 1%.
100 400 200 625 150 -55 to +150
*2. With each pin mounted on the recommended lands.
www.kexin.com.cn
1
SMD Type
2SK3018 ¡ö Electrical Characteristics Ta = 25¡æ
Parameter Gate-source leakage Drain-source Breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off time Fall time Symbol IGSS Testconditons VGS =¡À 20 V , VDS = 0 V 30 Min
MOSFET
Typ
Max
Unit
1 ìA ¡À V 1 0.8 5 7 20 13 9 4 15 35 80 80 1.5 8 13 ìA V ¦¸ mS pF pF pF ns ns ns ns
V(BR)DSS ID= 10 ìA, VGS = 0V IDSS VGS(th) RDS(on) Yfs Ciss Coss Crss td(on) tr td(off) tr VDS = 30 V, ...
Similar Datasheet