Document
HCC40xxx, HCC45xxx
Datasheet
Rad-hard, high voltage, CMOS logic series
Flat-14 Flat-16
DIL-14 DIL-16
Flat-24
DIL-24
The upper metallic lid is not electrically connected to any pins, nor to the IC die inside the package
Product status link HCC40xxx, HCC45xxx
Features
• ESCC qualified • 18 V Absolute maximum ratings • 3 V to 15 V operating voltage • Hermetic packages • Rad-hard 100 krad (Si) TID • SEL immune up to 119 MeV.cm²/mg • SEU immune up to 119 MeV.cm²/mg • -55 °C to +125 °C temperature range • ESCC specification available on ESCC website for each part
Description
The HCC40xxx and HCC45xxx series are composed of high-voltage CMOS functions, offering a set of highly noise tolerant gates, Flip-Flops, multiplexers, counters, bus interfaces, and several other functions. The radiation hardness, single event latch-up (SEL), single event upset (SEU) immunity, and the housing in hermetic packages of all types of both series make them usable in the most difficult environmental conditions. They are all qualified and tested over -55 °C to +125 °C ambiant temperature range. The complete specification of each type is available from the ESCC (European Space Components Coordination) web site: https://escies.org using its ESCC part number. STMicroelectronics® guarantees full compliance of qualified parts with these ESCC specifications.
DS6709 - Rev 8 - November 2020 For further information contact your local STMicroelectronics sales office.
www.st.com
HCC40xxx, HCC45xxx
Input equivalent circuit diagram
1
Input equivalent circuit diagram
Figure 1. Inputand equivalent circuit diagram
Note:
For the HCC4019B and the HCC4050B input equivalent circuit, there is no diode connected to VCC.
DS6709 - Rev 8
page 2/16
2
2.1
HCC40xxx, HCC45xxx
Radiations
Radiations
Total ionizing dose
All the devices of the HCC series are 100 krad guaranteed as per the test methods described in Table 1. TID test conditions for the CMOS4000B family.
Table 1. TID test conditions for the CMOS4000B family
Test parameter
Test conditions
Total dose
100 krad(Si)
Dose rate
40 krad(Si)/h
Sampling
4 biased parts by wafer on 3 wafer per diffusion lot plus 1 control part to qualify the wafer lot. In case one wafer fails,
qualification is done wafer per wafer on 4 biased parts
Bias conditions(1) Limits
VDD = 10 V(2) inputs at VDD(3)
VTHN, VTHP, IOL, IOH, TPHL, TPLH, VOL, VOH, VN, VP, VH: see “ESCC detail specifications”, limits ± 35% for high and low limits
Others tests performed as defined in “ESCC detail specification” with corresponding limits
1. During irradiation. 2. VDD = 10 Volt has been demonstrated to be the worst case condition during characterization. 3. Whenever functionally pertinent.
Figure 2. Irradiation test flow
1. The post rad guaranteed Vcc min. is therefore 5 V. DS6709 - Rev 8
page 3/16
HCC40xxx, HCC45xxx
Single event effects (SEE)
2.2
Single event effects (SEE)
The HCC logic series is characterized under heavy ions through four test vehicles, representative of all the products with the same functional specification as described in Table 2. HCC series, SEE class summary. The SEE class of each product is also provided in Table 2. HCC series, SEE class summary. The SEE performance of any HCC device of the series is the performance of the class it belongs to.
Table 2. HCC series, SEE class summary
Test vehicle HCC4014B HCC4017B HCC4093B HCC4020B
SEE class 1 2 3 4
The SEE performance of each SEE class is provided in Table 3. SEE performance of SEE classes
Type Class SEL 1, 2, 3, 4
1 2, 3 SEU
4 SET 1, 2, 3, 4
Table 3. SEE performance of SEE classes
Conditions 125 °C, VCC=20 V, LET = 119 MeV.cm2/mg,
ion range = 20 µm, 45 ° tilt 25 °C, LET = 61 MeV.cm2/mg, VCC=5 V, VIN=2.5 V ± 2.5 V, fIN=50 kHz,
fCLOCK =500 kHz, VCC=15 V, VIN=7.5 V ± 7.5 V, fIN=100 kHz, fCLOCK =1 MHz, ion range = 20 µm, 45 ° tilt
25 °C, LET = 119 MeV.cm2/mg, VCC=5 V, VIN=2.5 V ± 2.5 V, fIN=50 kHz, fCLOCK =500 kHz, VCC=15 V, VIN=7.5 V ± 7.5 V, fIN=100 kHz, fCLOCK =1 MHz, ion range = 20 µm, 45 ° tilt
25 °C, LET = 36 MeV.cm2/mg, VCC=5 V, VIN=2.5 V ± 2.5 V, fIN=50 kHz, fCLOCK =500 kHz,
VCC=15 V, VIN=7.5 V ± 7.5 V, fIN=100 kHz, fCLOCK =1 MHz,
ion range = 20 µm, 45 ° tilt 25 °C, LET = 119 MeV.cm2/mg, Trigger = ± 50 mV VCC=5 V, VIN=2.5 V ± 2.5 V, fIN=50 kHz, VCC= 15 V,
VIN= 7.5 V± 7.5 V, fIN=100 kHz
Result No event LETth> 60 MeV.cm2/mg, σ sat = 8 x 10-6 cm2
No event
LETth> 36 MeV.cm2/mg, σ sat = 1 x 10-4cm2
No event
DS6709 - Rev 8
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HCC40xxx, HCC45xxx
Ordering information
3
Ordering information
Table 4. Order codes
Product name
HCC4001B HCC4002B HCC40106B
HCC40109B
HCC4011B
Description
Rad-hard quad 2input NOR gate
Rad-hard dual 4input NOR gate
Rad-hard hex Schmitt trigger
Rad-hard quad lowto-high voltage level
shifter
Rad-hard quad 2input NAND gate
Commercial Product(1)
HCC4001BDG HCC4001BDT HCC4001BK1 HCC4001BKG HCC4001BKT HCC4002BDG HCC4002BDT HCC4002BKG HCC4002BKT.