STB32N65M5

STB32N65M5, STF32N65M5, STI32N65M5 STP32N65M5, STW32N65M5 N-channel 650 V, 0.095 Ω , 24 A, MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220FP, TO-220, TO-247 Features Order codes STB32N65M5 STF32N65M5 STI32N65M5 STP32N65M5 STW32N65M5 VDSS@ TJmax 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω ID 1 3 3 1 2 24 A 24 A(1) 24 A 24 A 24 A 3 12 D²PAK TO-220FP I²PAK 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ ■ 3 1 2 2 1 3 Worldwide best RDS(on)* area Higher VDSS rating High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested TO-220 TO-247 Figure 1. Internal schematic diagram $ Applications ■ Switching applications ' Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes STB32N65M5 STF32N65M5 STI32N65M5 STP32N65M5 STW32N65M5 October 2011 Marking 32N65M5 32N65M5 32N65M5 32N65M5 32N65M5 Package D²PAK TO-220FP I²PAK TO-220 TO-247 3 !-V Packaging Tape and reel Tube Tube Tube Tube 1/22 www.st.com 22 Doc ID 15316 Rev 4 Contents STB/F/I/P/W32N65M5 Cont...