STI32N65M5

STF32N65M5, STI32N65M5 STP32N65M5, STW32N65M5 Datasheet N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages Features TAB 3 12 TO-220FP ) TAB t(s 3 c 2 TO-220 1 rodu D(2, TAB) lete P G(1) roduct(s) - Obso S(3) I2PAK 1 2 3 3 12 TO-247 Order codes VDS at Tjmax. RDS(on) max. ID STF32N65M5 STI32N65M5 STP32N65M5 710 V 119 mΩ 24 A STW32N65M5 Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested Package TO-220FP I2PAK TO-220 TO-247 AM01475v1_noZen Applications Switching applications Description These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. Obsolete P Product status link STF32N65M5 STI32N65M5 STP32N65M5 STW32N65M5 DS12808 - Rev 1 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com STF32N65M5,STI32N65M5,STP32N65M5,STW32N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter I2PAK, Unit TO-220, TO-220FP ) VGS Gate-source voltage t(s ID Drain current (continuous) at TC = 25 °C c ID Drain current (continuous) at TC = 100 °C du IDM (1) Drain current (pulsed) ro ...