SiA400EDJ

SiA400EDJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.019 at VGS = 4.5 V 0.025 at VGS = 2.5 V ID (A)a 12 11.6 12 Qg (Typ.) PowerPAK SC-70-6L-Single TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area Typical ESD Performance 2500 V HBM 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Load Switch, OVP Switch Boost Converters DC/DC Converters D Marking Code 2.05 mm 2.05 mm Part # code AIX XXX Lot Traceability and Date code S N-Channel MOSFET G Ordering Information: SiA400EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Avalanche Current Single Pulse Avalanche TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 12 12a 12a 11b, c 8.8b, c 30 12a 2.9b, c 15 11.25 19.2 12.3 3.5b, c 2.2b, c - 55 to 150 260 Unit V A mJ W TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t5s 28 36 Maximum Junction-to-Ambientb, f °C/...