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SiA421DJ Dataheets PDF



Part Number SiA421DJ
Manufacturers Vishay
Logo Vishay
Description P-Channel 30 V (D-S) MOSFET
Datasheet SiA421DJ DatasheetSiA421DJ Datasheet (PDF)

SiA421DJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.035 at VGS = - 10 V 0.056 at VGS = - 4.5 V ID (A) - 12a - 12a Qg (Typ.) 10 nC • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch for Portable Devices • Buck Converter PowerPAK SC-70-6L-Single 1 D 2 D 3 6 .

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SiA421DJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.035 at VGS = - 10 V 0.056 at VGS = - 4.5 V ID (A) - 12a - 12a Qg (Typ.) 10 nC • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch for Portable Devices • Buck Converter PowerPAK SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm Ordering Information: SiA421DJ-T4-GE3 (Lead (Pb)-free and Halogen-free) SiA421DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET G BJX Part # code G XXX Lot Traceability and Date code S Marking Code 2.05 mm ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 30 ± 20 - 12a - 12a - 7.9b, c - 6.3b, c - 35 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t5s 28 36 Maximum Junction-to-Ambientb, f °C/W RthJC 5.3 6.5 Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 °C/W. Document Number: 73975 S12-1959-Rev. E, 13-Aug-12 www.vishay.com 1 Parameter This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA421DJ Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 55 °C VDS - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 5.3 A VGS = - 4.5 V, ID = - 4.2 A VDS = - 15 V, ID = - 5.3 A Min. - 30 Typ. Max. Unit V - 31 4 - 1.5 -3 ± 100 -1 - 10 - 20 0.029 0.046 15 0.035 0.056 mV/°C V nA µA A  S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 950 VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = - 15 V, VGS = - 10 V, ID = - 7.9 A VDS = - 15 V, VGS = - 4.5 V, ID = - 7.9 A f = 1 MHz VDD = - 15 V, RL = 2.4  ID  - 6.3 A, VGEN = - 4.5 V, Rg = 1  1.2 150 120 19 10 3 4.5 6.5 40 110 25 12 10 VDD = - 15 V, RL = 2.4  ID  - 6.3 A, VGEN = - 10 V, Rg = 1  12 30 10 TC = 25 °C IS = - 6.3 A, VGS = 0 V - 0.8 20 IF = - 6.3 A, dI/dt = 100 A/µs, TJ = 25 °C 15 12 8 13 60 165 40 20 15 20 45 15 - 12 35 - 1.2 30 30 ns  29 15 nC pF A V ns nC ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73975 S12-1959-Rev. E, 13-Aug-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH.


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