SiA427DJ

New Product SiA427DJ Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.016 at VGS = - 4.5 V 0.0215 at VGS = - 2.5 V -8 0.026 at VGS = - 1.8 V 0.032 at VGS = - 1.5 V 0.095 at VGS = - 1.2 V ID (A) - 12a - 12a - 12a - 12a -3 30 nC Qg (Typ.) TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 S G APPLICATIONS Load Switch, for 1.2 V Power Line for Portable and Handheld Devices S Marking Code BNX G 2.05 mm 2.05 mm Part # code XXX Lot Traceability and Date code D P-Channel MOSFET Ordering Information: SiA427DJ-T4-GE3 (Lead (Pb)-free and Halogen-free) SiA427DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit -8 ±5 - 12a - 12a - 12a, b, c - 9.9b, c - 50 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE ...