P-Channel 20-V (D-S) MOSFET
New Product
SiA431DJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) () 0.025 a...
Description
New Product
SiA431DJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) () 0.025 at VGS = - 4.5 V - 20 0.031 at VGS = - 2.5 V 0.041 at VGS = - 1.8 V 0.070 at VGS = - 1.5 V ID (A) - 12
a
Qg (Typ.)
- 12a - 12a -4
24 nC
New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TrenchFET® Power MOSFET
APPLICATIONS
Load Switch, PA Switch and Battery Switch for Portable Devices
PowerPAK SC-70-6L-Single
S 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm Ordering Information: SiA431DJ-T4-GE3 (Lead (Pb)-free and Halogen-free) SiA431DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET G Part # code
Marking Code
BKX XXX Lot traceability and Date code G
2.05 mm
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ±8 - 12a - 12a - 9.6b, c - 7.7b, c - 30 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V
A
Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
PD TJ, Tstg
W
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typi...
Similar Datasheet