N- and P-Channel 20-V (D-S) MOSFET
SiA519EDJ
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) N-Channel 20 RDS(on) ()...
Description
SiA519EDJ
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) N-Channel 20 RDS(on) () 0.040 at VGS = 4.5 V 0.065 at VGS = 2.5 V 0.090 at VGS = - 4.5 V 0.137 at VGS = - 2.5 V ID (A) 4.5
a
Qg (Typ.) 3.7 nC
4.5a - 4.5a - 4.5a
P-Channel
- 20
5.3 nC
TrenchFET® Power MOSFETs Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
PowerPAK® SC-70-6 Dual
D1
S1 D1 D1 6 5 2.05 mm G2 4 S2 2.05 mm D2 EGX Part # code XXX Lot Traceability and Date code 1 2 G1 3 D2
S2
Marking Code
G1 G2
S1
D2 P-Channel MOSFET
Ordering Information: SiA519EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS N-Channel 20 ± 12 4.5a 4.5a 4.5a, b, c 4.4b, c 15 4.5a 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 - 4.5a - 3.7b, c - 3b, c - 15 - 4.5a - 1.6b, c 7.8 5 1.9b, c 1.2b, c A 4.5a P-Channel - 20 Unit V
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source Drain Current Diode Current
Maximum Power Dissipation
PD TJ, Tstg
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
N-Channel Parameter P-Chan...
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