VOS627A
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package
FEATURES
• High CTR with low input current
A/C 1 4 C
• Low profile package (half pitch) • High collector emitter voltage VCEO = 80 V • Isolation test voltage = 3750 VRMS • Low coupling capacitance • High common mode transient immunity
C/A
2
3
E
22628-1
DESCRIPTION
The VOS627A series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 50 mil lead pitch mini-flat package. It features a high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits.
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Telecom • Industrial controls • Battery powered equipment • Office machines • Programmable controllers
AGENCY APPROVALS
Safety application model number covering all products in this datasheet is VOS627A. This model number should be used when consulting safety agency documents. • UL1577, file no. E52744 • cUL • DIN EN 60747-5-5 (VDE 0884-5), available with option 1 • FIMKO EN 60065, EN 60950-1 • CQC GB4943.1-2011 and GB8898-2011 (suitable for installation altitude below 2000 m)
ORDERING INFORMATION
V O S 6 2 7 A # CTR BIN X 0 0 1 T TAPE AND REEL
SSOP-4
PART NUMBER
PACKAGE OPTION
≥ 5 mm
AGENCY CERTIFIED/PACKAGE UL, cUL, FIMKO, CQC SSOP-4, 50 mil pitch UL, cUL, FIMKO, CQC, VDE (option 1) SSOP-4, 50 mil pitch 50 to 600 VOS627AT 50 to 600 VOS627A-X001T 63 to 125 VOS627A-2T 63 to 125
CTR (%) ± 5 mA 100 to 200 VOS627A-3T 100 to 200 VOS627A-3X001T 160 to 320 VOS627A-4T 160 to 320 VOS627A-4X001T
VOS627A-2X001T
Note • Additional options may be possible, please contact sales office.
Rev. 1.3, 17-Apr-13
Document Number: 83475 1 For technical questions, contact:
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VOS627A
www.vishay.com
Vishay Semiconductors
TEST CONDITION SYMBOL VR Pdiss IF VCEO VECO IC Pdiss VALUE 6 70 50 80 7 50 150 UNIT V mW mA V V mA mW
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER INPUT Reverse voltage Power dissipation Forward current OUTPUT Collector emitter voltage Emitter collector voltage Collector current Power dissipation COUPLER Isolation test voltage between emitter and detector Total power dissipation Storage temperature range Ambient temperature range Junction temperature Soldering temperature (1) t = 10 s t = 1 min VISO Ptot Tstg Tamb Tj Tsld 3750 170 - 55 to + 150 - 55 to + 110 125 260 VRMS mW °C °C °C °C
Notes • Stresses in excess of the absolute maximum ratings can cause permanent damag.