SiA906EDJ

New Product SiA906EDJ Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.046 at VGS = 4.5 V 0.063 at VGS = 2.5 V ID (A)a 4.5 3.5 nC 4.5 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance Typical ESD Protection 560 V APPLICATIONS PowerPAK SC-70-6 Dual Load Switch for Portable Applications High Frequency DC/DC Converter D1 D2 1 S1 2 G1 D1 D1 6 G2 5 2.05 mm 4 S2 D2 2.05 mm 3 D2 Marking Code CCX Part # code XXX Lot Traceability and Date code G1 G2 S1 S2 N-Channel MOSFET Ordering Information: SiA906EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 20 ± 12 4.5a 4.5a 4.5a, b, c 4.1b, c 15 4.5a 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 Unit V A PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit t≤5s RthJA 52 65 Maximum Junction-to-Ambientb, f °C/W RthJC 12.5 16 Maximum Junction-to-Case (Drain...