SiA910EDJ

SiA910EDJ Vishay Siliconix Dual N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.028 at VGS = 4.5 V 12 0.033 at VGS = 2.5 V 0.042 at Vgs = 1.8 V PowerPAK SC-70-6 Dual 1 S1 2 G1 D1 D1 6 G2 5 2.05 mm 4 S2 D2 2.05 mm D2 3 ID (A) 4.5 4.5 4.5 a Qg (Typ.) 6.2 nC TrenchFET® Power MOSFET Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance Typical ESD Protection: 2400 V 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Load Switch for Portable Applications High Frequency DC/DC Converter DC/DC Converter D1 D2 Ordering Information: SiA910EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 G2 Marking Code CFX Part # code XXX Lot Traceability and Date code N-Channel MOSFET S1 N-Channel MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 12 ±8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 Unit V A PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical...