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BDT62 Dataheets PDF



Part Number BDT62
Manufacturers INCHANGE
Logo INCHANGE
Description Silicon PNP Darlington Power Transistors
Datasheet BDT62 DatasheetBDT62 Datasheet (PDF)

isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type BDT63/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE .

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isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type BDT63/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT62 -60 VCBO Collector-Base Voltage BDT62A BDT62B -80 -100 BDT62C -120 BDT62 -60 VCEO Collector-Emitter Voltage BDT62A BDT62B -80 -100 BDT62C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 ICM Collector Current-Peak -15 IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -0.25 90 150 Tstg Storage Ttemperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-c Thermal Resistance,Junction to Ambient isc website:www.iscsemi.com MAX UNIT 1.39 ℃/W 70 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT62 V(BR)CEO Collector-Emitter Breakdown Voltage BDT62A BDT62B IC= -30mA; IB= 0 BDT62C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA VBE(on) ICBO Base-Emitter On Voltage BDT62 Collector Cutoff Current BDT62A BDT62B BDT62C BDT62 IC= -3A; VCE= -3V VCB= -60V; IE= 0 VCB= -30V; IE= 0; TJ=150℃ VCB= -80V; IE= 0 VCB= -40V; IE= 0; TJ=150℃ VCB= -100V; IE= 0 VCB= -50V; IE= 0; TJ=150℃ VCB= -120V; IE= 0 VCB= -60V; IE= 0; TJ=150℃ VCE= -30V; IB= 0 ICEO Collector Cutoff Current BDT62A BDT62B VCE= -40V; IB= 0 VCE= -50V; IB= 0 BDT62C VCE= -60V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A; VCE= -3V hFE-2 DC Current Gain IC= -10A; VCE= -3V VECF C-E Diode Forward Voltage IE= -3A Switching Times ton Turn-On Time toff Turn-Off Time IC= -3A; IB1= -IB2= -12mA BDT62/A/B/C MIN -60 -80 -100 -120 1000 TYP. 200 MAX -2.0 -2.5 -2.5 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0 -0.5 -0.5 -0.5 -0.5 -5 -2.0 UNIT V V V V mA mA mA V 0.5 μs 2.5 μs isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistors BDT62/A/B/C NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could hav.


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