Document
isc Silicon PNP Darlington Power Transistors
BDT62/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C
·Complement to Type BDT63/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT62
-60
VCBO
Collector-Base Voltage
BDT62A BDT62B
-80 -100
BDT62C
-120
BDT62
-60
VCEO
Collector-Emitter Voltage
BDT62A BDT62B
-80 -100
BDT62C
-120
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-10
ICM
Collector Current-Peak
-15
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
-0.25 90 150
Tstg
Storage Ttemperature Range
-65~150
UNIT
V
V
V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-c Thermal Resistance,Junction to Ambient
isc website:www.iscsemi.com
MAX UNIT 1.39 ℃/W 70 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT62
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT62A BDT62B
IC= -30mA; IB= 0
BDT62C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA
VBE(on) ICBO
Base-Emitter On Voltage BDT62
Collector Cutoff Current
BDT62A BDT62B
BDT62C BDT62
IC= -3A; VCE= -3V
VCB= -60V; IE= 0 VCB= -30V; IE= 0; TJ=150℃ VCB= -80V; IE= 0 VCB= -40V; IE= 0; TJ=150℃ VCB= -100V; IE= 0 VCB= -50V; IE= 0; TJ=150℃ VCB= -120V; IE= 0 VCB= -60V; IE= 0; TJ=150℃
VCE= -30V; IB= 0
ICEO
Collector Cutoff Current
BDT62A BDT62B
VCE= -40V; IB= 0 VCE= -50V; IB= 0
BDT62C VCE= -60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -3A; VCE= -3V
hFE-2
DC Current Gain
IC= -10A; VCE= -3V
VECF
C-E Diode Forward Voltage
IE= -3A
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -3A; IB1= -IB2= -12mA
BDT62/A/B/C
MIN -60 -80 -100 -120
1000
TYP. 200
MAX
-2.0 -2.5 -2.5 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0 -0.5 -0.5 -0.5 -0.5 -5
-2.0
UNIT V V V V
mA
mA mA V
0.5
μs
2.5
μs
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistors
BDT62/A/B/C
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could hav.