Document
HFS7N80
July 2005
BVDSS = 800 V
HFS7N80
800V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ (Typ.) ) Extended Safe Operating Area Lower RDS(ON) : 1.55 ȍ (Typ.) @VGS=10V 100% Avalanche Tested
TC=25 unless otherwise specified
RDS(on) typ = 1.55 ȍ ID = 7.0 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-Source Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Parameter
Value 800
Units V A A A V mJ A mJ V/ns W W/ఁ ఁ ఁ
– Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed
(Note 1)
7.0* 4.4* 28* ρͤ͡
(Note 2) (Note 1) (Note 1) (Note 3)
580 70 7.0 16.7 5.5 56 0.44 -55 to +150 300
Power Dissipation (TC = 25ఁ͚ ͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol RșJC RșJA Junction-to-Case Junction-to-Ambient Parameter Typ. --Max. 2.25 62.5 ఁ͠Έ Units
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͻΦΝΪ͑ͣͦ͡͡
HFS7N80
Electrical Characteristics TC=25 qC
Symbol y Parameter
unless otherwise specified
Test Conditions
Min
Typ y
Max
Units
On Characteristics
VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 3.5 A 2.5 --1.55 4.5 1.9 V ש
Off Characteristics
BVDSS D i S Drain-Source Breakdown B kd V Voltage lt VGS = 0 V V, ID = 250 Ꮃ ID = 250 Ꮃ͑͝ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125ఁ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 800 ------0.93 ------1 10 100 -100 V ·͠ఁ Ꮃ Ꮃ Ꮂ Ꮂ ԩBVDSS Breakdown Voltage Temperature Coefficient /ԩT J IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward G t B d L Gate-Body Leakage k C Current, t Reverse
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1500 120 18 1950 155 24 Ꮔ Ꮔ Ꮔ
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 400 V, ID = 7.0 A, RG = 25 ש
--------
40 120 60 70 35 10 13
80 240 120 140 45 ---
Ꭸ Ꭸ Ꭸ Ꭸ Οʹ Οʹ Οʹ
VDS = 640V, ID = 7.0 A, VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
Source-Drain Diode Maximum Ratings and Characteristics
IS ISM VSD trr Qrr Continuous Source-Drain Diode Forward Current Pulsed Source-Drain Diode Forward Current Source-Drain Source Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 7.0 70A A, VGS = 0 V IS = 7.0 A, VGS = 0 V diF/dt = 100 A/ȝs (Note 4).