KF4N80F

SEMICONDUCTOR TECHNICAL DATA General Description A KF4N80F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. O B E G DIM MILLIMETERS L M J R FEATURES VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)(Max)=2.6 Qg(typ.)= 17nC @VGS=10V D N N H 1 2 3 1. GATE 2. DRAIN 3. SOURCE Q A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 + K TO-220IS (1) MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 PD Derate above 25 Tj Tstg 0.34 150 -55 150 W/ IDP EAS EAR dv/dt ) SYMBOL VDSS VGSS ID 2.5* 11* 250 4.7 4.5 43 mJ S RATING 800 30 4* UNIT V V PIN CONNECTION D A G mJ V/ns W Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 2.9 62.5 /W /W * : Drain current limited by maximum junction temperature. 2012. 9. 5 Revis...