ST13001

ST 13001 NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Total Power Dissipation Junction Temperature Storage Temperature Range 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Symbol VCBO VCEO VEBO IC Ptot Tj TS Symbol hFE hFE ICBO ICEO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) fT tf ts Value 500 400 9 0.3 0.75 150 - 55 to + 150 Min. 5 10 500 400 9 8 Max. 40 100 200 100 0.5 1.2 0.3 1.5 Unit V V V A W O C C Unit µA µA µA V V V V V MHz µs µs O Characteristics at Ta = 25 C O Parameter DC Current Gain at VCE = 10 V, IC = 0.25 mA at VCE = 20 V, IC = 20 mA Collector Base Cutoff Current at VCB = 500 V Collector Emitter Cutoff Current at VCE = 400 V Emitter Base Cutoff Current at VEB = 9 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Base Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Transition Frequency at VCE = 20 V, IC = 20 mA, f = 1 MHz Fall Time at IC = 50 mA, IB = -IB2 = 5 mA, VCC = 45 V Storage Time at IC = 50 mA, IB = -IB2 = 5 mA, VCC = 45 V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code...