MDF2N60

MDP2N60/MDF2N60 N-channel MOSFET 600V MDP2N60/MDF2N60 N-Channel MOSFET 600V, 2.0A, 4.5Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 2.0A RDS(ON) ≤ 4.5Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D G TO-220 MDP Series TO-220F MDF Series S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt (3) (1) Symbol VDSS VGSS TC=25 C TC=100 C o o MDP2N60 600 ±30 2.0 1.2 8.0 53.9 0.43 5.39 4.5 115 MDF2N60 Unit V V ID IDM 2.0* 1.2* 8.0* 22.7 0.18 A A 24 W W/ oC mJ V/ns mJ o TC=25oC Derate above 25 oC PD EAR dv/dt EAS TJ, Tstg Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature -55~150 C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) (1) Symbol RθJA RθJC MDP2N60 62.5 2.32 MDF2N60 62.5 5.5 Unit o C/W Feb. 2010 Version 1.1 1 MagnaChip Semiconductor Ltd. MDP2N60/MDF2N60 N-channel MOSFET 600V Ordering Information Part Number MDP2N60TH MDF2N60TH Temp. Range -...