QLF1335-AD

QLF1335-AD 1300 nm FP LASER TO-CAN Preliminary C00051-02 May 2011 1. DESCRIPTION The QLF1335-AD is 1300 nm quantum dot laser diode device for use in extremely high temperature environment. The laser is mounted into a TO-56 header including a monitor PD for optical power control and hermetic sealed with a lens cap. Since quantum dot technologies are equipped with active layers of the device, it realizes excellent temperature characteristics and low power consumptions. 2.    FEATURES 1300 nm FP-LD Wide temperature operation: -25 to 150deg.C 5.6mm TO-CAN package 3. APPLICATION  High temperature use 4. ABSOLUTE MAXIMUM RATING PARAMETER Light Output Power LD Forward Current LD Reverse Voltage PD Forward Current PD Reverse Current PD Reverse Voltage Operation Temperature (Tc) Storage Temperature Lead Soldering Temperature (5 s) SYMBOL Po IF VRLD IFPD IRPD VRPD Tc Tstg Tsld (Tc = 25°C, unless otherwise specified) RATING UNIT 10 mW 100 mA 2 V 2 mA 5 mA 10 V -25 to 150 C -40 to 85 C 230 C 1/4 QLF1335-AD C00051-02 5. OPTICAL AND ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Ith Iop Vop  c  Im Df (Tc = 25°C, unless otherwise specified) TEST CONDITION MIN TYP MAX UNIT CW, 25deg.C 6 15 mA CW, 150 deg.C 18 25 mA CW, Po=4 mW, 25deg.C 28 40 mA CW, Po=2 mW, 150deg.C 40 50 mA CW, Po=4 mW 1.3 1.6 V CW, 25deg.C 0.18 0.22 W/A CW, 150deg.C 0.10 0.14 W/A CW, Po=4 mW, 25deg.C 1250 12931310 nm CW, Po=4 mW, RMS(-20dB), 2.8 4 nm 25deg.C CW, Po=4 mW, VRD=5 V 50 700 1000 A CW, Po=4 ...