QLF1335-AE

QLF1335-AE 1310 nm FP LASER TO-CAN Preliminary C00052-01 Oct. 2012 1. DESCRIPTION The QLF1335-AE is 1310 nm quantum dot laser diode device for use in extremely high temperature environment. The laser is mounted into a TO-56 header including a monitor PD for optical power control and hermetic sealed with a lens cap. Since quantum dot technologies are equipped with active layers of the device, it realizes excellent temperature characteristics and low power consumptions. 2. FEATURES  1310 nm FP-LD  Temperature insensitive operation  5.6mm TO-CAN package  Wide temperature operation: -25 to 175deg.C 3. APPLICATION  High temperature use 4. ABSOLUTE MAXIMUM RATING PARAMETER Light Output Power LD Forward Current LD Reverse Voltage PD Forward Current PD Reverse Current PD Reverse Voltage Operation Temperature (Tc) Storage Temperature Lead Soldering Temperature (5 s) SYMBOL Po IF VRLD IFPD IRPD VRPD Tc Tstg Tsld (Tc = 25°C, unless otherwise specified) RATING UNIT 10 mW 300 mA 2 V 2 mA 5 mA 10 V -25 to 175 C -40 to 85 C 230 C 1/4 QLF1335-AE C00052-01 5. OPTICAL AND ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Ith Iop Vop  c  Im Df (Tc = 25°C, unless otherwise specified) TEST CONDITION MIN TYP MAX UNIT CW, 25deg.C 15 25 mA CW, 175 deg.C 70 85 mA CW, Po=4 mW, 25deg.C 55 75 mA CW, Po=2 mW, 175deg.C 110 135 mA CW, Po=4 mW 1.3 1.6 V CW, 25deg.C 0.06 0.10 W/A CW, 175deg.C 0.04 0.06 W/A CW, Po=4 mW, 25deg.C 1250 1306 1310 nm CW, Po=4 mW, RMS(-20dB), 3.2 4 nm 25deg.C CW, ...