660 nm 100mW FP LASER TO-CAN
QLF063A /QLF063D
660 nm 100mW FP LASER TO-CAN C00100-01 January 2013
1. DESCRIPTION The QLF063A/QLF063D are 660 nm quan...
Description
QLF063A /QLF063D
660 nm 100mW FP LASER TO-CAN C00100-01 January 2013
1. DESCRIPTION The QLF063A/QLF063D are 660 nm quantum well laser devices designed for high output power application. The laser diode is mounted into a TO-56 header including a monitor PD and hermetic sealed with a flat glass cap.
2.
FEATURES 660 nm FP-LD 5.6mm TO-CAN package High output power of 100mW and high slope efficiency Including monitor PD Two types of pin assignments: anode common type (QLF063A)/cathode common type (QLF063D)
3.
APPLICATIONS Industrial laser markers Measuring instruments Life science applications
4.
ABSOLUTE MAXIMUM RATING PARAMETER Optical output power LD reverse voltage PD reverse voltage Operation temperature Storage temperature SYMBOL Po VRLD VRPD Tc Tstg (CW operation, Tc = 25°C, unless otherwise specified) RATING UNIT 130 mW 2 V 30 V -10 to 60 C -40 to 85 C
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QLF063A/QLF063D
C00100-01
5.
OPTICAL AND ELECTRICAL CHARACTERISTICS PARAMETER Threshold current Operation current Operation voltage Slope efficiency Monitor current Peak wavelength Far filed pattern horizontal Far filed pattern vertical Beam angle Horizontal Beam angle vertical SYMBOL Ith Iop Vop Im p h v dh dv TEST CONDITION CW CW, Po=100 mW CW, Po=100 mW CW, Po=5 - 100 mW CW, Po=100 mW, VRD=5 V CW, Po=100 mW CW, Po=100 mW CW, Po=100 mW CW, Po=100 mW CW, Po=100 mW (Tc = 25°C, unless otherwise specified) MIN TYP MAX UNIT 55 70 mA 145 200 mA 2.5 3.0 V 0.8 1.1 W/A 50 655 7 11 -3 -3 28...
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