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QLF063D-AA

QD Laser

660 nm 50mW FP LASER TO-CAN

QLF063A-AA /QLF063D-AA 660 nm 50mW FP LASER TO-CAN C00111-01 June 2013 1. DESCRIPTION The QLF063A-AA/QLF063D-AA are 660...


QD Laser

QLF063D-AA

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Description
QLF063A-AA /QLF063D-AA 660 nm 50mW FP LASER TO-CAN C00111-01 June 2013 1. DESCRIPTION The QLF063A-AA/QLF063D-AA are 660 nm quantum well laser devices designed for high output power application. The laser diode is mounted into a TO-56 header including a monitor PD and hermetic sealed with a flat glass cap. 2. FEATURES  660 nm FP-LD  5.6mm TO-CAN package  High output power and high slope efficiency  Including monitor PD  Two types of pin assignments: anode common type (QLF063A-AA)/cathode common type (QLF063D-AA) 3.    APPLICATIONS Industrial laser markers Measuring instruments Life science applications 4. ABSOLUTE MAXIMUM RATING PARAMETER Optical output power LD reverse voltage PD reverse voltage Operation temperature Storage temperature SYMBOL Po VRLD VRPD Tc Tstg (CW operation, Tc = 25°C, unless otherwise specified) RATING UNIT 60 mW 2 V 30 V -10 to 60 C -40 to 85 C 1/4 QLF063A-AA/QLF063D-AA C00111-01 5. OPTICAL AND ELECTRICAL CHARACTERISTICS PARAMETER Threshold current Operation current Operation voltage Slope efficiency Monitor current Peak wavelength Far filed pattern horizontal Far filed pattern vertical Beam angle Horizontal Beam angle vertical SYMBOL Ith Iop Vop  Im p h v dh dv TEST CONDITION CW CW, Po=50 mW CW, Po=50 mW CW, Po=5 - 50 mW CW, Po=50 mW, VRD=5 V CW, Po=50 mW CW, Po=50 mW CW, Po=50 mW CW, Po=50 mW CW, Po=50 mW (Tc = 25°C, unless otherwise specified) MIN TYP MAX UNIT 55 70 mA 100 135 mA 2.3 2.8 V 0.8 1.1 W/A 25 655 7 11 -3 -3 1...




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