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50N30C Dataheets PDF



Part Number 50N30C
Manufacturers nELL
Logo nELL
Description N-Channel Power MOSFET
Datasheet 50N30C Datasheet50N30C Datasheet (PDF)

SEMICONDUCTOR 50N30 Series N-Channel Power MOSFET 50A, 300Volts RoHS RoHS Nell High Power Products DESCRIPTION The Nell 50N30 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 300V, and max. threshold voltage of 6.5 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, battery chargers, DC choppers, .

  50N30C   50N30C


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SEMICONDUCTOR 50N30 Series N-Channel Power MOSFET 50A, 300Volts RoHS RoHS Nell High Power Products DESCRIPTION The Nell 50N30 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 300V, and max. threshold voltage of 6.5 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, battery chargers, DC choppers, temperature and lighting controls and general purpose switching applications. G D S TO-247AB (50N30C) D (Drain) FEATURES RDS(ON) = 0.080Ω @ VGS = 10V Ultra low gate charge(65nC typical) Low reverse transfer capacitance (C RSS = 60pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) typical 50 300 0.080 @ V GS = 10V 65 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL VDSS V DGR V GS ID I DM I AR E AR E AS dv/dt PD TJ T STG TL PARAMETER Drain to Source voltage Drain to Gate voltage Gate to Source voltage Continuous Drain Current TEST CONDITIONS T J =25°C to 150°C R GS =20KΩ VALUE 300 300 ± 20 UNIT V T C =25°C T C =100°C 50 35 A 150 50 Pulsed Drain current(Note 1) Avalanche current(Note 1) Repetitive avalanche energy(Note 1) Single pulse avalanche energy(Note 2) Peak diode recovery dv/dt(Note 3) Total power dissipation Linear derating factor above T C =25 ° C Operation junction temperature Storage temperature Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw 1.6mm from case T C =25°C l AR =50A, R GS =50 Ω , V GS =10V l AS =50A, L =0.1mH 50 mJ 1500 50 690 5.8 -55 to 150 -55 to 150 300 10 (1.1) lbf . in (N . m) ºC V /ns W ° C/W Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . l AS =50 A, L =0.1 mH , V DD =50 V , R GS =25 Ω , starting T J = 25 ° C. 3 . I SD ≤ 50 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , T J ≤ 150 °C. www.nellsemi.com Page 1 of 7 SEMICONDUCTOR 50N30 Series RoHS RoHS Nell High Power Products THERMAL RESISTANCE SYMBOL Rth(j-c) Rth(j-a) PARAMETER Thermal resistance, junction to case Thermal resistance, junction to ambient MIN. TYP. MAX. 0.18 ºC/W 50 UNIT ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL OFF CHARACTERISTICS V(BR)DSS Drain to source breakdown voltage Breakdown voltage temperature coefficient Drain to source leakage current PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT I D = 1mA , V GS = 0V I D = 1mA, V DS =V GS V DS =300V, V GS =0V V DS =240V, V GS =0V T C =25°C T C =125°C 300 0.35 10 V V/ºC μA 100 100 nA -100 ▲V (BR)DSS/▲T J I DSS Gate to source forward leakage current I GSS Gate to source reverse leakage current ON CHARACTERISTICS R DS(ON) V GS(TH) g fs Static drain to source on-state resistance Gate threshold voltage V GS = 20V, V DS = 0V V GS = -20V, V DS = 0V V GS =10V, l D =25A V GS =V DS , I D =4mA V DS = 20V, l D = 25A 3.5 19 29 0.080 6.5 Ω V S Forward transconductance DYNAMIC CHARACTERISTICS C ISS C OSS C RSS RG Input capacitance Output capacitance Reverse transfer capacitance Gate input resistance V DS =25V, V GS =0V, f=1MHz 60 0.17 Ω 3160 600 pF SWITCHING CHARACTERISTICS t d(ON) tr t d(OFF) tf QG Q GS Q GD Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge (Miller charge) V DD = 150V, V GS =10 V I D =25A, (Note1,2) V DD =150V, V GS =10 V I D =25A, R GS =2 Ω (Note1,2) 14 15 24 9 65 22 32 nC ns SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) PARAMETER Diode forward voltage Continuous source to drain current TEST CONDITIONS I SD = 50A, V GS = 0V Integral reverse P-N junction diode in the MOSFET D (Drain) MIN. TYP. MAX. 1.4 50 UNIT V A I SM Pulsed source current G (Gate) 200 S (Source) t rr Q rr Reverse recovery time Reverse recovery charge I SD = 25A, V GS = 0V, dI F /dt = 100A/µs 250 0.95 ns μC Note: 1. Pulse test: Pulse width ≤ 300 µ s, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 2 of 7 SEMICONDUCTOR 50N30 Series RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME 50 N 30 Current rating, ID 50 = 50A C MOSFET series N = N-Channel Voltage rating, VDS 30 = 300V Package type C = TO-247AB ■ TEST CIRCUITS Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms D.U.T. + V DS V GS (Driver) Period P.W. D= P.W. Period V GS =10V + l SD (D.U.T) L l FM , Body Diode forward current di/dt l RM Body Diode Reverse Current RG Driver Same Type as D.U.T. * dv/dt controlled by R G * l SD controlled by pulse period * D.U.T.-Device under test V DD V DS (D.U.T) Body Diode Recovery dv/dt V DD V GS Body Diode Forward Voltage Drop www.nellsemi.com Page 3 of 7 SEMICOND.


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