40CTQ045SPbF Datasheet: SCHOTTKY RECTIFIER





40CTQ045SPbF SCHOTTKY RECTIFIER Datasheet

Part Number 40CTQ045SPbF
Description SCHOTTKY RECTIFIER
Manufacture International Rectifier
Total Page 6 Pages
PDF Download Download 40CTQ045SPbF Datasheet PDF

Features: 40CTQ045SPbF/40CTQ045-1PbF Vishay High P ower Products Schottky Rectifier, 2 x 20 A 40CTQ045SPbF 40CTQ045-1PbF FEATUR ES • 150 °C TJ operation • Center tap configuration • Very low forward voltage drop • High frequency operati on Available RoHS* COMPLIANT Base com mon cathode 2 Base common cathode 2 High purity, high temperature epoxy encapsulation for enhanced mechanical s trength and moisture resistance • Gua rd ring for enhanced ruggedness and lon g term reliability • Lead (Pb)-free ( “PbF” suffix) • Designed and qual ified for Q101 level 2 1 Common 3 Anod e cathode Anode 2 1 Common 3 Anode cat hode Anode DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barr ier technology allows for reliable oper ation up to 150 °C junction temperatur e. Typical applications are in switchin g power supplies, converters, freewheel ing diodes, and reverse battery protection. D PAK 2 TO-262 PRODUCT SUMMARY IF(AV).

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40CTQ045SPbF/40CTQ045-1PbF
Vishay High Power Products
Schottky Rectifier, 2 x 20 A
40CTQ045SPbF
40CTQ045-1PbF
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
D2PAK
2
1 Common 3
Anode cathode Anode
TO-262
PRODUCT SUMMARY
IF(AV)
VR
2 x 20 A
45 V
FEATURES
• 150 °C TJ operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
Available
RoHS*
COMPLIANT
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for Q101 level
DESCRIPTION
This center tap Schottky rectifier has been optimized for very
low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 µs sine
VF 20 Apk, TJ = 125 °C (per leg)
TJ Range
VALUES
40
45
1240
0.48
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
40CTQ045SPbF
40CTQ045-1PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 116 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 3 A, L = 4.40 mH
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
20
40
1240
350
20
3
UNITS
A
mJ
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94213
Revision: 13-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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