C1106

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com 2SC1106 DESCRIPTION ·With TO-3 package ·High power dissipation ·High breakdown voltage APPLICATIONS ·For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE 350 250 6 2 80 150 -55~150 UNIT V V V A W ? ? SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1106 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 250 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 350 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 5.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=350V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=0.2A ; VCE=5V 30 2 SavantIC Semiconductor Product Specification Silicon NPN Power Tr...